This resulted inside of a decreased operate perform plus the development of a Schottky contact in between the BrGO and n-style Si substrate. As a consequence of the upper proportion of B-C and B-C3 bonding within the BrGO/Si product than that from the rGO/Si, the reduced Schottky barrier height in https://www.directivepublications.org/journal-of-applied-nanoscience/